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多孔型铝阳极氧化膜常被用作制备纳米阵列材料的模板,然而阻挡层的存在却在很多方面制约了其应用。为此,已经提出了各种不同的方法来去除阻挡层。本文将这些方法分为2类,即剥离氧化膜去阻挡层和不剥离氧化膜去阻挡层。前者包括化学腐蚀法、干蚀法、电解剥离法;后者包括阶梯降压法、高电流击穿法、电化学法和有多孔铝支撑的化学溶解法。其中,化学腐蚀法和干蚀法的工艺条件已相当成熟,得到了广泛应用,而其它几种方法还多处于实验室研究阶段。由于氧化膜脆性很大,因此,不剥离氧化膜原位去除阻挡层的方法具有更大的实用价值。
Porous aluminum anodic oxide films are often used as templates for the fabrication of nanoarray materials, however, the presence of barrier layers has limited its application in many aspects. To this end, various methods have been proposed to remove the barrier. In this paper, these methods are divided into two categories, that is, stripping the oxide film to the barrier layer and not stripping the oxide film to the barrier layer. The former includes chemical etching method, dry etching method and electrolytic peeling method. The latter method includes step-down method, high current breakdown method, electrochemical method and chemical dissolution method with porous aluminum support. Among them, the chemical etching and dry etching process conditions have been quite mature, has been widely used, while several other methods are still more in the laboratory research stage. Due to the high brittleness of the oxide film, the method of removing the barrier layer in situ without peeling off the oxide film has greater practical value.