认为“双极速度快、功耗大”,“MOS速度慢”等的常识已不复成立。MOS方面有取数时间为35毫微秒高速4k静态RAM。另外,双极电路也能在低功耗条件下保持高速工作。现在已经进入了出现每门延迟时间为亚毫微秒、1000门左右的双极LSI(芯片的耗电量是1～2瓦左右)时代。 例如在数字LSI中,有每门功耗1.43瓦、延迟时间0.9毫微秒的1600门LSI处 The common sense that “bipolar speed, power consumption,” “MOS speed is slow,” no longer holds true. MOS has a fetch time of 35 ns 4k static RAM. In addition, the bipolar circuit can also maintain high-speed operation under low power consumption. It has now entered an age of submicron LSIs with a delay of sub-nanoseconds and a gate count of 1000 (the power consumption of the chip is about 1 to 2 watts). For example, in a digital LSI, there are 1600 LSIs each having a power consumption of 1.43 W and a delay time of 0.9 ns