论文部分内容阅读
介绍了溶胶-凝胶法制备掺Dy元素的Bi4Ti3O12(Bi3.4Dy0.6Ti3O12,BDT)薄膜的工艺过程,并研究了不同预退火气氛对沉积在Pt/Ti/SiO2/Si基片上的BDT薄膜铁电性能的影响。空气中的预退火,薄膜中的H,C等有机成分分解不彻底,有部分残留在薄膜中;而O2气氛下的预退火,由于O2充足,薄膜中的有机成分可以完全分解。退火过程中BDT薄膜晶粒的生长和取向可以受到残留的有机成分的影响,进而对BDT薄膜的铁电性有较为显著的影响。在外加400kV/cm的电场时,空气中预退火的BDT薄膜的剩余极化(2Pr)值和矫顽场(Ec)分别为26.37μC/cm2和114.2kV/cm,而O2气氛下预退火的BDT薄膜的2Pr和Ec分别为36.28μC/cm2和113.6kV/cm,表明O2气氛下预退火可显著提高BDT薄膜的剩余极化值,改善其铁电性能。
The preparation process of Bi4Ti3O12 (Bi3.4Dy0.6Ti3O12, BDT) films doped with Dy element by sol-gel method was introduced. The effects of different pre-annealing atmospheres on the deposition of BDT thin films on Pt / Ti / SiO2 / The impact of electrical properties. Pre-annealing in air, the film of H, C and other organic components decomposition is not complete, some remain in the film; and O2 atmosphere pre-annealing, due to O2 sufficient, the organic components of the film can be completely decomposed. The growth and orientation of BDT thin films in the annealing process can be influenced by the remaining organic components, which in turn has a significant effect on the ferroelectricity of BDT thin films. The remanent polarization (2Pr) and coercive field (Ec) of pre-annealed BDT films in air were 26.37μC / cm2 and 114.2kV / cm, respectively, with an applied electric field of 400kV / cm. The 2Pr and Ec of BDT films are 36.28μC / cm2 and 113.6kV / cm, respectively. It shows that pre-annealing in O2 atmosphere can significantly increase the remanent polarization of BDT films and improve their ferroelectric properties.