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固体能带理论的研究工作已经进行了整整半个世纪.早期的工作着重于研究在周期性势场作用下电子波函数及其能量状态的一般特征,在此基础上建立起固体能带论模型,从而为固体物理的研究奠定了一个重要的基础.五十年代初随着晶体管的发现,半导体物理得到了迅速的发展,不少学者投入了半导体能带结构研究的行列.半导体的主要特征是能带分成导带和满带两支,中间夹有一段禁带.许多重要物理特性几乎都是由导带底和满带顶附近电子的运动状态所决定的,因此在这一段时期内半导体物理学的主要工作是探索这些导带底和满带顶的位置以及在此附近能带的曲率半径,即电子和空穴的有效质量.与此相应,一些半导体能带理论工作者借助于计算机的发展,也算得了一些k空间中高对称点的能量值,并且用微扰法进一步算出了导带底和满带顶的有效质量.
Solid energy band theory has been studied for half a century.Early work focuses on the general characteristics of the electron wave function and its energy state under the action of periodic potential field.On the basis of this, a solid energy band theory model , Which laid an important foundation for the study of solid state physics.With the discovery of transistors in the early 1950s, semiconductor physics has been rapid development, many scholars have put into the ranks of semiconductor energy band structure research.The main features of the semiconductor is The energy band is divided into conduction band and full band with a band gap in between. Many of the important physical properties are almost always determined by the movement of the electrons at the bottom of the conduction band and near the top of the full band. Therefore, during this period of time, The main task of learning is to explore the locations of these bottom and top of ribbons and the radius of curvature of the band near them, ie, the effective masses of electrons and holes. In response, some semiconductors can be used by theorists The energy values of some high symmetry points in k-space are also calculated, and the effective mass of the conduction band bottom and overband top is further calculated by the perturbation method.