The Ⅲ-Ⅴ wide band gap semiconductors show the potential in applications for dilute magnetic semiconductors.AlN films are implanted with 20-keV Mn+ ions with a dose of 5 × 1016cm-2. The cross section of as-implanted AlN are investigated by field-emission scanning electron microscopy and the energy dispersive spectra. The result confirms that the implantation depth is about 100nm. Cathodoluminescence measurements show the main peak at 2.6eV attributed to a donor-to-Mn2+ transition. It is argued that the Mn element in AlN can act as a p-type dopant peak at 2.07eV. The magnetic measurement shows a transition temperature of 100K in the implanted AlN annealed at 500℃ for 30min. Clear ferromagnetic hysteresis was observed at 77K, with a coercive field of 212.7Oe.