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报导了经电子辐照后的高阻 (4 5～ 70Ω·cm)NTD FZ Si p+nn+结的N Si中缺陷态在氮气保护下的等时、等温退火特性 ,而且获得了主要缺陷态能极E3、E4 的激活能和频率因子。
The isothermal and isothermal annealing behavior of the defect state of N Si in the high resistance (4 5 ~ 70Ω · cm) NTD FZ Si p + nn + junction after electron irradiation under nitrogen protection was reported and the main defect states E3, E4 activation energy and frequency factor.