In this paper, the positive influence of a uni-traveling-carrier(UTC) structure to ease the contract between the responsivity and working speed of the In P-based double hetero-junction phototransistor(DHPT) is illustrated in detail. Different results under electrical bias, optical bias or combined electrical and optical bias are analyzed for an excellent UTC-DHPT performance. The results show that when the UTC-DHPT operates at three-terminal(3T) working mode with combined electrical bias and optical bias in base, it keeps a high optical responsivity of 34.72 A/W and the highest optical transition frequency of 120 GHz. The current gain of the 3T UTC-DHPT under 1.55-μm light illuminations reaches 62 d B. This indicates that the combined base electrical bias and optical bias of 3T UTC-DHPT can make sure that the UTC-DHPT provides high optical current gain and high optical transition frequency simultaneously. In this paper, the positive influence of a uni-traveling-carrier (UTC) structure to ease the contract between the responsivity and working speed of the In P-based double hetero-junction phototransistor (DHPT) is illustrated in detail. Different results under The results show that when the UTC-DHPT operates at three-terminal (3T) working mode with combined electrical bias and optical bias in base, the electrical bias, optical bias or combined electrical and optical bias are analyzed for an excellent UTC-DHPT performance. The current gain of the 3T UTC-DHPT under 1.55-μm light illuminations reaches 62 d B. It indicates that the combined base electrical bias and optical bias of 3T UTC-DHPT can make sure that the UTC-DHPT provides high optical current gain and high optical transition frequency simultaneously.