基于GIXRR反射率曲线的二氧化硅纳米薄膜厚度计算

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为了快速、准确得到纳米薄膜厚度,采用Kiessig厚度干涉条纹计算薄膜厚度的线性拟合公式,计算了不同系列厚度(10~120nm)的二氧化硅薄膜。薄膜样品采用热原子层沉积法(T-ALD)制备,薄膜厚度使用掠入射X射线反射(GIXRR)技术表征,基于GIXRR得到的反射率曲线系统讨论了线性拟合公式计算薄膜厚度的步骤及影响因素,同时使用XRR专业处理软件GlobalFit2.0比较了两种方法得到的膜厚,最后提出一种计算薄膜厚度的新方法-经验曲线法。结果表明:峰位级数对线性拟合厚度产生主要影响,峰位级数增加,厚度增大;峰位对应反射角同样对线性拟合厚度有较大影响,表现为干涉条纹周期增大,厚度减小。但峰位级数及其对应反射角在拟合薄膜厚度过程中引入的误差可进一步通过试差法,临界角与干涉条纹周期的校准来减小。对任意厚度的同一样品,线性拟合和软件拟合两种方法得到的薄膜厚度具有一致性,厚度偏差均小于0.1nm,表明线性拟合方法的准确性。在厚度准确定值的基础上提出薄膜厚度与干涉条纹周期的经验关系曲线,通过该曲线,可直接使用干涉条纹周期计算薄膜厚度,此方法不仅省略了线性拟合过程中确定峰位级数及其对应反射角的繁琐步骤,而且避免了软件拟合过程中复杂模型的建立,对快速、准确获得薄膜厚度信息具有重要的意义。 In order to obtain the thickness of the nanofilms quickly and accurately, a linear fit formula of Kiessig thickness interference fringes to calculate the thickness of the nanofilms was used to calculate the different series of thickness (10 ~ 120nm) of the silicon dioxide films. The film samples were prepared by thermal atomic layer deposition (T-ALD) and the film thickness was characterized by grazing incidence X-ray reflection (GIXRR). Based on the reflectance curve obtained by GIXRR, the steps and effects of the linear fit formula to calculate the film thickness were discussed Factors, while using XRR professional processing software GlobalFit2.0 compared the thickness of the two methods obtained, and finally proposed a new method of calculating the thickness of the film - empirical curve method. The results show that the number of peak positions has a significant effect on the thickness of the linear fit, the number of peak positions increases and the thickness increases. Corresponding reflection angles at the peak positions also have a significant influence on the thickness of the linear fit, which shows that the period of interference fringes increases, The thickness is reduced. However, the errors introduced in fitting the film thickness by the peak position series and their corresponding reflection angles can be further reduced by the trial and error method, the calibration of the critical angle and the interference fringe period. For any thickness of the same sample, the linearity and the software fitting of the two methods are consistent with the film thickness, the thickness deviation are less than 0.1nm, indicating the accuracy of the linear fitting method. Based on the accurate thickness setting, an empirical curve of the film thickness and interference fringe period is proposed. By using this curve, the interference fringe period can be directly used to calculate the film thickness. This method not only omits the determination of the number of peak positions in the linear fitting process, Which corresponds to the tedious steps of the reflection angle, and avoids the establishment of complex models in the software fitting process, which is of great significance for obtaining the film thickness information quickly and accurately.
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