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电子工业部河北半导体研究所第15次科研成果鉴定会(1985年)上,有4项成果通过部级鉴定: CX591型GaAs微波低噪声场效应管 栅长0.25μm。12GHz下噪声系数小于1.2dB, 功率增益9dB;4GHz下噪声系数为0.4dB。
Ministry of Electronics Industry, Hebei Institute of semiconductor 15th Scientific Research Achievement Appraisal (1985), 4 results through ministerial level identification: CX591 type GaAs microwave low noise FET gate length 0.25μm. The noise figure at 12GHz is less than 1.2dB and the power gain is 9dB. The noise figure at 4GHz is 0.4dB.