Some properties of excitons in poiar semiconductors are studied theoretically by means of squeezed statevariational approach. This method makes it possible to consider bilinear terms of the phonon operators as well as linearterms arising from the Lee-Low-Pines (LLP)-like transformation. The exciton ground state energy and binding energyare calculated numerically. It is shown that the squeezing effect is significant in the case of strong exciton-phononcoupling region. Some properties of excitons in poiar semiconductors are studied theoretically by means of squeezed state variational approach. This method makes it possible to consider bilinear terms of the phonon operators as well as linearterms arising from the Lee-Low-Pines (LLP) -like transformation. exciton ground state energy and binding energyare calculated numerically. It is shown that the squeezing effect is significant in the case of strong exciton-phononcoupling region.