论文部分内容阅读
构造了由电单负材料A和磁单负材料B组成的(AB)N(BA)N型一维光子晶体,利用传输矩阵法进行了数值计算。结果表明:其带隙中出现了一隧穿模。此隧穿模具有如下特征:入射角θ增加,隧穿模向短波方向移动,且其半峰全宽变窄,入射角越大,变化越明显;介质层的几何厚增加,隧穿模向长波方向移动,且移动量和介质厚度的增量间存在线性关系;A介质的介电常数εA或B介质的磁导率μB增加,隧穿模向长波方向移动,移动量与εA或μB的增量呈非线性关系,但εA越大或μB越小,隧穿模的半峰全宽度越窄。上述参数变化时,隧穿模的透射率始终保持为1。
The (AB) N (BA) N type one-dimensional photonic crystal composed of the single electron-negative material A and the single-negative magnetic material B was constructed and the numerical calculations were carried out by the transfer matrix method. The results show that a tunneling mode appears in the band gap. The tunneling die has the following characteristics: the incidence angle θ increases, the tunneling mode moves toward the shortwave, and the full width at half maximum of the tunnel narrows. The larger the incident angle is, the more obvious the change is. The geometric thickness of the dielectric layer increases and the tunneling mode Long wave direction, and there is a linear relationship between the moving distance and increment of medium thickness. The dielectric constant εA of medium A or the magnetic permeability μB of medium B increases, and the tunneling mode moves in the direction of longwave. The moving distance is related to εA or μB The increase is non-linear, but the larger the εA or the smaller μB, the narrower the full width at half maximum of the tunneling mode. When the above parameters are changed, the transmittance of the tunneling mode always remains at 1.