论文部分内容阅读
研究了ＩｎＧａＮ／ＡｌＧａＮ双异质结构（ＤＨ）蓝光发光二极管（ＬＥＤ）的电学和光学性质。实验表明，器件正向偏压下的Ｉ－Ｖ特性偏离了ｐｎ结二极管的肖克莱模型的结果，并且载流子的主要输运机制与载流子隧穿有关。通过对电致发光（ＥＬ）谱的测量，得到位于２．８ｅＶ的发射峰和位于３．２ｅＶ弱发射峰，随着电流增大而均出现蓝移。对大脉冲电流下ＬＥＤ的特性的退化作了研究。
The electrical and optical properties of InGaN / AlGaN double heterostructure (DH) blue light emitting diodes (LEDs) were studied. The experimental results show that the I-V characteristics of the device under the forward bias deviate from the Shockley’s model of the pn junction diode, and the main transport mechanism of carriers is related to carrier tunneling. By measuring the electroluminescence (EL) spectrum, the emission peak at 2.8 eV and the weak emission peak at 3.2 eV were obtained, and the blue shift occurred as the current increased. The degradation of LED characteristics under large pulse current was studied.