论文部分内容阅读
研究分析了采用MBE技术外延中波碲镉汞薄膜原位p-on-n材料生长结构及掺杂浓度。掌握了MBE碲镉汞原位p-on-n薄膜材料的生长温度、掺杂浓度和p-n结界面的控制技术,研究了原位p-on-n材料杂质的电学激活退火技术。利用傅里叶变换红外透过测试拟合得到了材料的组分、厚度均匀性,利用X-ray双晶衍射测试结果分析了晶体质量,并统计了材料的EPD值。利用SIMS测试分析了材料中杂质分布状况和浓度,对台面器件I-V特性曲线进行了测试分析。
The growth structure and doping concentration of in-situ p-on-n material using MCE epitaxial medium HgCdTe films were investigated. The growth temperature, doping concentration and p-n junction interface of MBE in situ p-on-n thin films were mastered. The electrical activation annealing of in-situ p-on-n impurities was studied. The composition and thickness uniformity of the material were obtained by Fourier transform infrared transmission fitting. The crystal quality was analyzed by X-ray double crystal diffraction and the EPD value of the material was calculated. The SIMS test was used to analyze the distribution and concentration of impurities in the material, and the I-V characteristic curve of the mesa was tested and analyzed.