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采用射频反应溅射法在玻璃衬底上制备Zn3N2薄膜,然后向真空室中通入纯氧气进行热氧化制备ZnO薄膜.利用X射线衍射、扫描电子显微镜、霍尔效应测量、透射光谱和光致发光光谱等表征技术,研究了氧化温度和氧化时间对ZnO薄膜的结晶质量、电学性质和光学性能的影响.研究结果显示,450℃下氧化2h后的样品中除含有ZnO外,还有Zn3N2成分,500℃下氧化2h可以制备出电阻率为0.7Ωcm,空穴载流子浓度为1017cm-3,空穴迁移率为0.9cm2/Vs的具有c轴择优取向的p型ZnO薄膜.此时的ZnO薄膜具有良好的光学特性,紫外可见光范围内透过率为85%,处于紫外区域的激子复合产生的发光峰很强,且半高宽较窄,而处于可见光部分来自于深能级发射的绿色发光峰很弱.这种工艺制备的ZnO薄膜质量较好,有利于实现在短波长光电器件方面的应用.
ZnO thin films were prepared on glass substrate by radio frequency reactive sputtering method and then annealed to pure oxygen in the vacuum chamber for thermal oxidation to prepare ZnO thin films.The structure of ZnO thin films was characterized by X-ray diffraction, scanning electron microscopy, Hall effect measurement, transmission spectrum and photoluminescence The effects of oxidation temperature and oxidation time on the crystalline quality, electrical properties and optical properties of ZnO thin films were studied.The results show that the samples containing ZnO at 450 ℃ for 2h contain not only ZnO but also Zn3N2, The p-type ZnO thin films with a preferred orientation of c-axis of 0.7 Ωcm, a hole carrier concentration of 1017 cm-3 and a hole mobility of 0.9 cm 2 / Vs were prepared by oxidation at 500 ℃ for 2 h. The film has good optical properties, the transmittance in the UV-visible range is 85%, the exciton recombination in the UV region produces a strong luminescence peak and a narrow FWHM, while the visible light is derived from the deep level emission The green luminescence peak is very weak.The quality of the ZnO thin film prepared by this process is good, which is beneficial to the application in the short wavelength photoelectric device.