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本文分析了短沟道 NMOS 器件的特点,比较了在多种假设条件下导出的短沟道 NMOS 器件的 V_T 模型。在此基础上,着重介绍了遵循按比例缩小的 HMOS 电路设计原则,采用常规的 NMOS 电路生产设备和加以改进的常规NMOS 工艺条件,研制成功了具有4μ线宽结构的,已用于整机组装的两种DJS-061微型计算机分片电路:数据总线缓冲器 Bl 和外部通用接口适配器 PIA-A。与常规工艺比较,芯片面积缩小1倍多,而集成度可增加1倍以上。为获得4μ线宽,在工艺上我们作了以下几个方面的探索:①用正性胶进行细线条光刻;②采用盐酸清洗法和掺氯氧化相结合的优质氧化工艺;③对 Si_3N_4,Poly-S_1,Al 进行干法腐蚀;④除场区注入以外,还对沟道区进行 B~+注入。
In this paper, the characteristics of short-channel NMOS devices are analyzed and the V_T models of short-channel NMOS devices derived under many assumptions are compared. On this basis, the principle of designing the HMOS circuit according to the scaling-down is emphatically introduced. By adopting the conventional NMOS circuit manufacturing equipment and the conventional NMOS process conditions to be improved, a 4μ line width structure has been successfully developed, which has been used in the complete assembly The two DJS-061 microcomputer chip circuits: the data bus buffer B1 and the external universal interface adapter PIA-A. Compared with the conventional process, the chip area more than doubled, while the integration can be increased more than 1 times. In order to obtain the 4μ line width, we made the following exploration on the process: ① fine line lithography with positive glue; ② high-quality oxidation process with hydrochloric acid cleaning method and chlorine-doped oxidation; ③ the Si_3N_4, Poly-S_1, Al for dry etching. ④ In addition to field implantation, B ~ + implantation is also performed on the channel region.