论述了纵向对称双硅栅薄膜 MOSFET的等电位近似模型的研究 ,通过对该器件建立泊松方程 ,并利用在阈值电压附近硅膜中的等电位近似 ,得到了这种对称双硅栅 MOSFET器件的电流模型 ,并在不同参数下对该模型进行了模拟 ,最终得到 Ids-Vg 曲线 This paper discusses the research on the isopotential approximation model of the vertical symmetric double-silicon gate MOSFET. By establishing the Poisson’s equation and using the equipotential approximation in the silicon film near the threshold voltage, this symmetrical double-gate MOSFET device Of the current model, and under different parameters of the model was simulated, the final Ids-Vg curve