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针对化合物半导体芯片通孔内镀金层薄导致通孔接地电阻大的问题,优化了喷液电镀台和挂镀电镀台的通孔镀金工艺条件,研究了两者在电镀过程中的镀液流场的差异,分析了两种电镀方式的工艺结果有显著差异的原因。喷液电镀台最佳工艺条件:直流电镀,电流积为15 A·min,电流密度为0.4 A/dm2,镀液体积流量为20 L/min时,对深宽比约为2∶1的通孔样品进行电镀,得到孔内外镀层厚度比接近1∶1的良好电镀效果。实验结果表明:喷液电镀台在晶圆通孔电镀方面有较大优势,可在不增加背面镀金厚度的情况下增加通孔内镀层厚度,不仅解决了芯片通孔内镀金层薄的问题,而且有利于降低成本,是今后通孔电镀工艺发展的方向之一。
In view of the problem that the gold-plated thin layer in the via hole of the compound semiconductor chip leads to the large grounding resistance of the through-hole, the through-hole gold-plating process conditions of the liquid-jet plating station and the hanging plating-electroplating station are optimized. The differences between the two plating methods are analyzed. The optimal conditions for the liquid jet plating station are as follows: DC plating, current product of 15 A · min, current density of 0.4 A / dm2, volume flow rate of 20 L / min, The hole samples were electroplated to give a good plating effect near the inside and outside of the holes with a thickness ratio closer to 1: 1. The experimental results show that the spray plating station has greater advantages in the through-hole plating of the wafer and can increase the thickness of the through-hole without increasing the thickness of the backside gold plating, which not only solves the problem of thin gold plating in the through-hole of the chip, Is conducive to reducing costs, is the future development of through-hole plating process.