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随着半导体微波技术的迅速发展,近年来人们一直期望获得一种性能优良的半导体材料,以制造性能较好的半导体微波器件。InP材料虽问世己多年,但引起人们的注意还只是近几年的事。InP材料是一种Ⅲ-Ⅴ族化合物半导体,和砷化镓一样,也适用于制造微波器件。但与GaAs相比,InP还具有某些独特的优点。如电流峰谷比大、阈值电场高、最大电子漂移速度快、转移效率高、极限频率高及噪声系数低等等。这些特点适用于制造体效应器件和场效应器件。与此同时,因其热导大,具有高频大功率的潜力,因而更加引人注目。
With the rapid development of semiconductor microwave technology, in recent years, people have been expecting to obtain a semiconductor material with excellent performance so as to manufacture a semiconductor microwave device with better performance. Although the InP material has been around for many years, it has only attracted the attention of people in recent years. The InP material is a Group III-V compound semiconductor that, like gallium arsenide, is also suitable for making microwave devices. However, InP also has some unique advantages over GaAs. Such as current peak to valley ratio, high threshold electric field, the maximum electron drift speed, transfer efficiency, high frequency limit and low noise figure. These features apply to the manufacture of body effect devices and field effect devices. At the same time, it is even more noticeable because of its large thermal conductivity and its potential for high-frequency power.