论文部分内容阅读
本文采用分子束外延(MBE)方法在BaF_2衬底上直接外延生长了CdTe(111)薄膜.反射高能电子衍射(RHEED)实时监控生长表面,衍射图样揭示了CdTe(111)在BaF_2表面由二维生长向三维生长的变化过程.XRD表征验证了外延生长的CdTe薄膜的单晶性质.由红外透射光谱测量和理论拟合相结合,得到了CdTe外延薄膜室温带隙宽度E_g=1.511 eV.
In this paper, CdTe (111) thin film was directly epitaxially grown on BaF_2 substrate by molecular beam epitaxy (MBE). The surface of CdTe (111) thin film was directly monitored by reflective high energy electron diffraction (RHEED). The diffraction pattern revealed that CdTe (111) XRD characterization verified the single crystal properties of the epitaxial CdTe thin films.With the combination of infrared transmission spectrum measurement and theoretical fitting, the band gap width of CdTe epitaxial films at room temperature was obtained as E_g = 1.511 eV.