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CdZnTe晶体是一种性能优异的室温核辐射探测器材料。在熔体法生长CdZnTe晶体的过程中,生长炉的内部温场分布对获得的晶体结构和性能有很大影响。根据CdZnTe晶体的生长习性,设计了三温区单晶炉,用坩埚下降法生长出CdZnTe单晶体。通过X射线衍射、红外透过率、I-V测试等分析研究,得到了红外透过率约为61%,腐蚀蚀坑密度(EPD)为104cm-2,电阻率为109~1010Ω.cm的Cd0.9Zn0.1Te单晶体。表明三温区坩埚下降法生长的单晶体结晶质量好、成分分布均匀、EPD低、红外透过性能好且电阻率高。
CdZnTe crystal is an excellent room temperature nuclear radiation detector material. During the growth of CdZnTe crystals by melt method, the distribution of temperature field in the growth furnace has a great influence on the crystal structure and properties obtained. According to the growth habit of CdZnTe crystals, a three temperature zone single crystal furnace was designed and a single crystal of CdZnTe was grown by the crucible down method. Through the analysis of X-ray diffraction, infrared transmittance and IV test, Cd0 with the infrared transmittance of about 61%, the corrosion pitting density (EPD) of 104cm-2 and the resistivity of 109 ~ 1010Ω.cm were obtained. 9Zn0.1Te single crystal. The result shows that the single crystal grown by the crucible drop method in the three temperature zone has good quality, uniform composition, low EPD, good infrared transmittance and high resistivity.