利用射频磁控反应溅射以Ar、CH4 为原料气体 ,在较宽的工艺参数范围内制备出了GexC1-x薄膜。利用X射线衍射 (XRD)、X射线光电子谱 (XPS)对制备的薄膜进行了分析。结果表明 ,GexC1-x薄膜的结构强烈依赖于制备的工艺参数。当沉积温度较低、射频功率不大时 ,GexC1-x薄膜主要为非晶态结构。随着沉积温度升高、射频功率增大 ,薄膜中出现Ge微晶相。GexC1-x薄膜中Ge与C发生电荷的转移 ,形成化学键。 Using RF magnetron reactive sputtering with Ar, CH4 as raw material gas, GexC1-x thin films were prepared in a wide range of process parameters. The prepared films were analyzed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The results show that the structure of GexC1-x film strongly depends on the process parameters. When the deposition temperature is low, RF power is not large, GexC1-x film is mainly amorphous structure. As the deposition temperature increases, the RF power increases and the Ge microcrystalline phase appears in the film. GexC1-x film Ge and C charge transfer occurs, the formation of chemical bonds.