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人们对用于1.0～1.7μm波长光纤通信系统光源的以InGaAsP和InGaAs作有源层的半导体激光器已进行了广泛研究。本文报导一种采用分子束外延生长制备的InGaAs/InP隐埋异质结激光器,该激光器的隐埋层是用液相外延生长的。InGaAs/InP隐埋异质结激光器的结构如图1所示。该激光器是以掺Sn(100)InP为衬底,用分子束外延生长:(1) n-InP限制层;(2) 非掺杂(n-型)InGaAs有源层;(3) p-InP限制层。接着用液相外延生长隐埋层(p-InP层和n-InP层),再用分子束外延生长p-InGaAs顶层。在分子束外延生长
Extensive research has been conducted on semiconductor lasers using InGaAsP and InGaAs as an active layer for a light source of a wavelength of 1.0 to 1.7 μm for optical fiber communication systems. This paper reports an InGaAs / InP buried heterostructure laser fabricated by molecular beam epitaxy. The buried layer of the laser is grown by liquid phase epitaxy. InGaAs / InP buried heterojunction laser structure shown in Figure 1. The laser is epitaxially grown by molecular beam epitaxy with Sn (100) InP as a substrate: (1) an n-InP confinement layer; (2) an undoped (n-type) InGaAs active layer; (3) InP limit layer. Subsequently, the buried layers (p-InP layer and n-InP layer) were epitaxially grown by liquid phase epitaxy and the top layer of p-InGaAs was grown by molecular beam epitaxy. Epitaxial growth in molecular beam