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栅氧化层的击穿和漏电是阻碍半导体集成电路发展的重要因素,提高栅氧化层的均匀性可极大地改善栅氧化层的性能。通过引入N2等惰性气体,在高温下对原位水汽氧化法形成的栅氧化层进行实时退火处理。实验结果表明:与没有经过高温N2实时退火处理的栅氧化层相比,经过高温N2实时退火处理的栅氧化层表面均匀度可提高40%左右,栅氧界面态总电荷可减少一个数量级。PMOS器件负偏压不稳定性(NBTI)测试中0.1%样品失效时间(t0.1%)和50%样品失效时间(t50%)分别提高28.6%和40.7%。
Gate oxide breakdown and leakage is an important factor impeding the development of semiconductor integrated circuits, the gate oxide layer to improve the uniformity can greatly improve the performance of the gate oxide. By introducing an inert gas such as N2, the gate oxide formed by the in-situ water vapor oxidation process is annealed at high temperature in real time. The experimental results show that the surface uniformity of the gate oxide layer annealed at high temperature N2 can be increased by about 40% compared with that of the gate oxide layer without high-temperature N2 real-time annealing, and the total gate-oxide interface state charge can be reduced by one order of magnitude. The 0.1% sample failure time (t0.1%) and 50% sample failure time (t50%) in PMOS negative bias instability (NBTI) test increased by 28.6% and 40.7% respectively.