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采用热蒸发镀膜方法制备Mg_(2-x)Mn_xSi(原子比x=0.00,0.02,0.04,0.06,0.08)半导体薄膜.用X射线衍射仪(XRD)、原子力显微(AFM)对Mg_(2-xMn_xSi薄膜样品的晶体结构和表面形貌进行表征,用四探针仪测试样品的电阻率,研究Mn掺杂量对Mg2Si薄膜结构和电阻率的影响.结果表明,在Si(111)衬底上制备Mg_(2-xMn_xSi多晶薄膜,其衍射峰(220)、(200)和(111)随Mn含量的增加逐渐增强.当x=0.02-0.06时,制备的Mg_(2-xMn_xSi薄膜具有较低的平均粗糙度和RMS(Root Mean Square)粗糙度.Mn掺杂降低了Mg2Si薄膜的电阻率,且电阻率随着掺杂量的增加呈现下降趋势.
Mg 2-x Mn x Si (atomic ratio x = 0.00, 0.02, 0.04, 0.06, 0.08) semiconductor thin films were prepared by thermal evaporation method. -XMn_xSi films were characterized by X-ray diffraction (XRD), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XRD) .The crystal structure and surface morphology of the films were characterized by four- , The diffraction peaks (220), (200) and (111) of Mg 2-x Mn x Si polycrystalline thin films were increased with the increase of Mn content. When x = 0.02-0.06, Lower average roughness and Root Mean Square (RMS) roughness.Mn doping decreases the resistivity of Mg2Si films, and the resistivity shows a decreasing trend with the increase of doping amount.