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采用射频磁控溅射方法在玻璃衬底上制备了掺铝ZnO透明导电薄膜(AZO)。为了降低AZO薄膜的电阻率,采用在溅射气氛中通入一定比例H2的方法对AZO薄膜进行氢化处理,并研究了溅射气氛中H2含量及衬底温度对AZO薄膜氢化效果的影响。结果表明:在低温条件下,氢化处理能有效降低AZO薄膜的电阻率;在衬底温度为100℃的低温条件下,通过调节溅射气氛中H2的比例,制备了电阻率为6.0×10-4Ω.cm的高质量氢化AZO薄膜,该电阻值低于同等条件下未氢化AZO薄膜电阻值的1/3;但随着衬底温度的升高,氢化处理对薄膜电学性能的改善效果逐渐减弱。
Aluminum-doped ZnO transparent conductive films (AZO) were prepared on glass substrates by RF magnetron sputtering. In order to reduce the resistivity of the AZO thin film, the AZO thin film was hydrogenated by introducing a certain proportion of H2 into the sputtering atmosphere, and the influence of the H2 content in the sputtering atmosphere and the substrate temperature on the hydrogenation effect of the AZO thin film was studied. The results show that hydrogenation can effectively reduce the resistivity of the AZO thin film under low temperature conditions. By adjusting the proportion of H2 in the sputtering atmosphere at a low substrate temperature of 100 ℃, the resistivity of the AZO thin film is 6.0 × 10- 4Ω.cm high-quality hydrogenated AZO film, the resistance value is lower than the same conditions unhydrogenated AZO film resistance value of 1/3; but as the substrate temperature increases, hydrogenation of the improvement of the electrical properties of the film gradually weakened effect .