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首次报导了光电导型混晶Si1-xGex 波导探测器。混晶Si1-xGex 是在硅基SiON/SiO2 /Si上用快速加热超低压化学气相淀积生长并经 6 50℃退火 30min得到的。探测器宽 10 μm ,长 2mm。探测器加上 2 0V偏置电压时 ,探测灵敏度在 0 0 2 2～ 0 0 10A/W之间。混晶Si1-xGex 造成探测器的光谱响应曲线发生蓝移。当锗组分x =0 35、 0 4、0 5、和 0 6时 ,探测器峰值波长分别对应为 875nm、 892nm、 938nm和 984nm。这种探测器有望能直接制作在硅基SiO2 波导元器件的尾端上 ,可用于光互连和光数据处理。
The first report of photoconductive mixed-crystal Si1-xGex waveguide detectors. The mixed crystal Si1-xGex is grown on Si-based SiON / SiO2 / Si by rapid heating and ultra-low pressure chemical vapor deposition and annealed at 650 ℃ for 30min. The detector is 10 μm wide and 2 mm long. Detector with 20V bias voltage, the detection sensitivity between 0 0 2 2 ~ 0 0 10A / W. The mixed crystal Si1-xGex caused a blue shift in the detector’s spectral response curve. The detector peak wavelengths correspond to 875 nm, 892 nm, 938 nm, and 984 nm for the germanium components x = 0 35, 0 4, 0 5, and 0 6, respectively. This detector is expected to be fabricated directly on the tail of silicon-based SiO2 waveguide devices for optical interconnection and optical data processing.