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最小标准模型(MSM)结构的光电探测器主要分为光导型和肖特基型两种。制备得到了肖特基型的氮化镓(GaN)MSM结构紫外光电探测器,采用这种结构的器件主要是因为其暗电流低、响应时间快、响应度大、寄生电容小等优点。MSM形状的叉指电极是通过传统的紫外光刻和湿法刻蚀得到的,并采用Au作为金属电极。得到的肖特基型GaN紫外光电探测器的暗电流在1 V偏压下为3.5 nA,器件在1 V偏压下的最大响应度值出现在362 nm处,大小为0.12 A/W,器件的上升时间小于10 ns,下降时间为210 ns。并对器件响应时间的影响因素进行了深入的分析。
The smallest standard model (MSM) structure of the photodetector can be divided into two types of photoconductive and Schottky. A Schottky barrier (GaN) MSM structure UV photodetector was fabricated. The device with this structure is mainly due to its low dark current, fast response time, high responsivity and small parasitic capacitance. The MSM-shaped interdigital electrodes are obtained by conventional UV lithography and wet etching, using Au as the metal electrode. The dark current of the resulting Schottky GaN ultraviolet photodetector was 3.5 nA at 1 V bias and the maximum responsivity at 1 V bias was at 362 nm with a size of 0.12 A / W. The device The rise time is less than 10 ns and the fall time is 210 ns. The influencing factors of device response time are analyzed in depth.