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本文综合近年 LEC 法生长不掺杂的半绝缘 GaAs 晶体的研究结果,对晶体生长工艺及晶体特性的研究概况作一评述。在晶体生长方面,详细论述了坩埚材料、B_2O_3的水份及熔体化学计量比对晶体性质的影响,以及影响晶体纯度和完整性的一些因素。在晶体特性方面,阐述了剩余杂质,以及本征结构缺陷引起的深、浅载流子陷阱的性质;进而论述了这些本征缺陷,特别是深能级电子陷阱 EL2,所起的补偿作用,以及对晶体热稳定性和均匀性的影响。
In this paper, we synthesize the research results of semi-insulating GaAs grown without LEC in recent years and review the research progress of the crystal growth process and the crystal properties. In terms of crystal growth, the effects of crucible material, water content and melt stoichiometry of B 2 O 3 on the properties of the crystals, as well as some factors affecting the purity and integrity of the crystals are discussed in detail. In terms of the crystal properties, the properties of the remaining impurities and deep and shallow carrier traps caused by the intrinsic structural defects are expounded. Furthermore, the compensation effects of these intrinsic defects, especially the deep level electron trap EL2, are discussed. As well as on the thermal stability and uniformity of the crystal.