论文部分内容阅读
用熔融法结合放电等离子烧结方法合成了Zn掺杂单相p型Ge基Ⅰ型笼合物Ba8Ga16ZnxGe30-x(x=3,4,5,6),探索Zn取代Ge对其热电性能的影响规律,结果表明:所制备的Ba8Ga16ZnxGe30-x化合物为p型传导,随Zn取代量x的增加,化合物室温载流子浓度Np逐渐增加,室温载流子迁移率μH和电导率逐渐降低.在所有试样中,Ba8Ga16Zn3Ge27化合物的Seebeck系数α在300—870K内始终最大,温度为300K时Seebeck系数为234μV/K,在700K附近达295μV/K.化合物的热导率随Zn取代量x的增加而降低.Ba8Ga16Zn3Ge27化合物在806K最大ZT值达0.38.
Zn-doped single-phase p-type Ge-based cataract Ba8Ga16ZnxGe30-x (x = 3,4,5,6) was synthesized by a melting method and a spark plasma sintering method to explore the effect of Zn substitution on the thermoelectric properties , The results show that the prepared Ba8Ga16ZnxGe30-x compounds are p-type conductive, with the increase of the Zn substitution amount x, the carrier concentration Np of the compound gradually increases and the carrier mobility μH and the conductivity decrease gradually at room temperature. In the sample, the Seebeck coefficient α of the Ba 8 Ga 16 Zn 3 Ge 27 compound is always the maximum in 300-870 K, the Seebeck coefficient is 234 V / K at 300 K, and 295 V / K at 700 K. The thermal conductivity of the compound decreases as the Zn substitution amount x increases .Ba8Ga16Zn3Ge27 compounds have maximum ZT of 0.38 at 806K.