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Ge- Si O2 共溅射薄膜分别在 O2 、N2 和空气中退火后 ,在 Xe灯 2 5 0 nm线激发下 ,均观测到位于 40 0和 30 0 nm的紫、紫外光发射 (PL) .傅里叶变换红外吸收谱 (FT- IR)表明 ,这两个 PL 峰与锗氧化物紧密相关 .进一步的光致发光激发谱 (PL E)则证实它们来源于 Ge O色心的光学跃迁 .对比不同退火气氛下的 PL 强度 ,发现最强的光发射出现在 80 0℃氧气里退火的样品中 .这表明 ,退火气氛中氧的存在 ,能够增强 Ge- Si O2 共溅射薄膜的紫、紫外光发射 ,是一种增强光发射强度的新途径 .
Ge-Si O2 co-sputtering films were annealed in O2, N2 and air respectively, and violet and ultraviolet (PL) emissions at 40 0 and 30 0 nm were observed under 250 nm Xe excitation. Fourier Transform Infrared Absorption Spectroscopy (FT-IR) showed that these two PL peaks were closely related to germanium oxide, and further photoluminescence excitation spectra (PL E) confirmed their optical transition from Ge O center. Comparing the PL intensities under different annealing atmospheres, it was found that the strongest light emission occurred in the samples annealed at 800 ° C, indicating that the presence of oxygen in the annealing atmosphere can enhance the violet, UV light emission, is a new way to enhance light emission intensity.