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本文介绍的是关于半导体衬底中的杂质浓度以及经外延生长、杂质扩散、离子注入等工艺过程的半导体中的杂质浓度分布的测定方法和装置。近年来,随着电子工业技术的发展,作为其主力军的半导体、集成电路等,愈来愈多样化起来。与此同时,向半导体衬底掺杂的方法也多样化了。例如,在采用离子注入掺杂的方法中,用以前的简单余误差函数分布和高斯分布不能说明的地方很多,在这种情况下,杂质浓度分布的测定对各厂家、研究机关等都成了非常重要的问题。
Described herein is a method and apparatus for measuring the impurity concentration in a semiconductor substrate and the impurity concentration distribution in a semiconductor by processes such as epitaxial growth, impurity diffusion, ion implantation, and the like. In recent years, with the development of electronic industry technology, semiconductors and integrated circuits, as its main force, are diversified. At the same time, methods of doping into semiconductor substrates have also been diversified. For example, in the ion implantation doping method, there are many places that can not be explained by the simple simple residual error function distribution and the Gaussian distribution. In this case, the determination of the impurity concentration distribution is made to various manufacturers and research institutes Very important question.