论文部分内容阅读
This paper presents a new cleaning process for particle and organic contaminants on polished silicon wafer surfaces.It combines a non-ionic surfactant with boron-doped diamond(BDD) film anode electrochemical oxidation. The non-ionic surfactant is used to remove particles on the polished wafer’s surface,because it can form a protective film on the surface,which makes particles easy to remove.The effects of particle removal comparative experiments were observed by metallographic microscopy,which showed that the 1%v/v non-ionic surfactant achieved the best result. However,the surfactant film itself belongs to organic contamination,and it eventually needs to be removed.BDD film anode electrochemical oxidation(BDD-EO) is used to remove organic contaminants,because it can efficiently degrade organic matter.Three organic contaminant removal comparative experiments were carried out:the first one used the non-ionic surfactant in the first step and then used BDD-EO,the second one used BDD-EO only,and the last one used RCA cleaning technique.The XPS measurement result shows that the wafer’s surface cleaned by BDD-EO has much less organic residue than that cleaned by RCA cleaning technique,and the non-ionic surfactant can be efficiently removed by BDD-EO.
This paper presents a new cleaning process for particle and organic contaminants on polished silicon wafer surfaces. It combines a non-ionic surfactant with boron-doped diamond (BDD) film anode electrochemical oxidation. The non-ionic surfactant is used to remove particles on the polished wafer’s surface, because it can form easy protective film on the surface, which makes particles easy to remove. The effects of particle removal experiment experiments observed by metallographic microscopy, which showed that the 1% v / v non-ionic surfactant achieved the best result. However, the surfactant film itself belongs to organic contamination, and it eventually needs to be removed. BD Film anode electrochemical oxidation (BDD-EO) is used to remove organic contaminants, because it can efficiently degrade organic matter. removal applied experiments were carried out: the first one used the non-ionic surfactant in the first step and then used BDD-EO, the second one used BDD-EO onl The XPS measurement result shows that the wafer’s surface was cleaned by BDD-EO has much less organic residue than that cleaned by RCA cleaning technique, and the non-ionic surfactant can be efficiently removed by BDD -EO.