据《JEE》1990年6月号报道,日立公司研制成功一种用电中性粒子进行精细图形腐蚀的工艺,称为中性束辅助腐蚀工艺.目前等离子腐蚀工艺是用于制造大规模集成电路,而此技术对于4M毕特和16M毕特产品,能够隔离损伤和晶体缺陷,因此能稳定地对上述产品进行生产.然而将其用于制造图形 According to “JEE” reported in June 1990, Hitachi successfully developed a fine pattern of electricity neutral particles for the etching process, known as the neutral beam assisted corrosion process.Current plasma etching process is used to manufacture large-scale integrated circuits , And this technology for 4M bit and 16M bit products, can be isolated from damage and crystal defects, so the above products can be stably produced.However, it will be used to create graphics