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常规的IRAN方法太繁锁,而且筛选周期较长.近年来我们进行的大量实验表明:用电子束辐照,电子束退火,可以作为IRAN的一种方法.实验方法本实验所采用的样品有CMOS电路,双极型晶体管.CMOS电路是国产CO36电路,其中有Al_2O_3膜,Si_3N_4膜、SiO_2膜钝化的CO36电路和没有钝化的CO36电路;双极型晶体管是经Al_2O_3膜钝化具有一定核加固能力的PNP型小功率管3CK_2和3CG型晶体管.
The conventional IRAN method is too cumbersome and has a long screening cycle.Many experiments carried out in recent years show that electron beam irradiation and electron beam annealing can be used as a method of IRAN.Experimental Methods The samples used in this experiment were CMOS circuit, bipolar transistor .CMOS circuit is a domestic CO36 circuit, which has Al_2O_3 film, Si_3N_4 film, SiO_2 film passivation of the CO36 circuit and the passivation of the CO36 circuit; bipolar transistor passivation Al_2O_3 film has a certain PNP power transistors 3CK_2 and 3CG transistors for nuclear reinforcement.