注入衰降引起的硅／二氧化硅／金属系统的电物理参数变化＝［刊．俄］／－１９９３．２２（２）．－２０～２６从硅中向二氧化硅膜中注入载流子电荷，伴随有金属－介质－半导体结构衰降，根据注入到二氧化硅层中载流子数量而逐渐发生。在注入过程中，二氧化硅层中和硅二氧... Changes in Electrophysical Parameters of Silicon / Silica / Metal Systems Caused by Injection Decay [. Russian] / - 1993.22 (2). -20 to 26 The carrier charge is injected into the silicon dioxide film from the silicon and gradually decreases in accordance with the number of carriers injected into the silicon dioxide layer due to the decay of the metal-dielectric-semiconductor structure. In the implantation process, the silicon dioxide layer and silicon dioxide ...