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本文研究了La2Cu1-xVxO4+δ(0≤x≤0.08)的结构及电输运性质.用Rietveld方法对所有样品的X射线衍射谱进行了拟合.结果表明,全部样品都具有正交对称性,晶胞参数随掺杂量的增加几乎没有变化.随着V掺杂量增加到0.08,而La2Cu1-xVxO4+δ中过量氧的平均值从0.006增加到0.007.没有掺杂的样品由于氧过量而存在相分离状态,体系中存在超导相与绝缘相的竞争相互作用.随着V掺杂量增加,超导相受到破坏,我们认为,V掺杂对超导电性抑制的原因可能是载流子浓度的减少和载流子的局域化所致.
In this paper, the structure and electric transport properties of La2Cu1-xVxO4 + δ (0≤x≤0.08) were studied.The X-ray diffraction spectra of all the samples were fitted by Rietveld method.The results show that all the samples have orthorhombic symmetry , The unit cell parameters almost did not change with the increase of doping amount.The average value of excess oxygen in La2Cu1-xVxO4 + δ increased from 0.006 to 0.007 with the increase of V doping amount to 0.08. But there exists a phase separation state in which there exists a competition interaction between the superconducting phase and the insulating phase.With the increase of V doping, the superconducting phase is destroyed, and we think that the reason for the inhibition of superconductivity by V doping may be The decrease of the concentration of the carrier and localization of the carrier result.