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半导体压敏器件由于具有灵敏度高、结构小巧及使用方便等特点,在传感技术中得到了广泛的应用.半导体压敏器件的研究随着电子技术的发展,显得愈来愈重要.新器件的开发和研究是这方面的重要课题.本文提出了一种新的压敏效应——汞-硅接触形成的肖特基势垒的压容效应.根据这种效应可以研制出一种新型的压敏器件——汞-硅压敏二极管.作者从实验中发现在微小压力作用下,汞-硅肖特基势垒的势垒电容都发生了显著的变
Due to its high sensitivity, compact structure and easy to use, semiconductor pressure-sensitive devices have been widely used in sensing technology.Research on semiconductor pressure-sensitive devices has become more and more important with the development of electronic technology. Development and research are important topics in this field.This paper presents a new pressure-sensitive effect - the pressure-tolerant effect of Schottky barrier formed by mercury-silicon contact.According to this effect, a new type of pressure Sensitive Devices - Mercury-Silicon Pressure Sensitive Diode The authors have found from experiments that the barrier capacitance of the mercury-silicon Schottky barrier changes significantly under slight pressure