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针对大光腔结构往往导致阈值电流密度增大的矛盾,设计了一种具有较高势垒高度的三量子阱有源区。采用非对称宽波导结构的半导体激光器,该激光器在实现大光腔结构的同时保持阈值电流密度不增加。通过金属有机物化学气相沉积(MOCVD)生长InGaAs/AlGaAs三量子阱有源区以及3.6μm超大光腔半导体激光器的外延结构。结合后期工艺,制备了980nm脊形边发射半导体激光器。在未镀膜情况下,4mm腔长半导体激光器阈值电流为1105.5mA,垂直发散角为15.6°,注入电流为25A时的最大输出功率可达到15.9 W。测试结果表明:所设计的半导体激光器在有效地拓展光场,实现大光腔结构的同时,保证了激光器具有较低的阈值电流。
Aiming at the contradiction between large cavity structure and increasing threshold current density, a triple quantum well active region with high barrier height is designed. A semiconductor laser using an asymmetric wide waveguide structure does not increase the threshold current density while realizing a large cavity structure. The epitaxial structure of InGaAs / AlGaAs triple quantum well active region and 3.6μm superluminal cavity semiconductor laser were grown by metal organic chemical vapor deposition (MOCVD). Combined with the post-process, a 980nm ridge edge emitting semiconductor laser was fabricated. In the uncoated case, the 4mm cavity length semiconductor laser has a threshold current of 1105.5mA, a vertical divergence angle of 15.6 ° and a maximum output power of 15.9W at an injection current of 25A. The test results show that the designed semiconductor laser can effectively expand the optical field and realize the structure of a large optical cavity while ensuring that the laser has a lower threshold current.