在０—７ＧＰａ静压范围内测量了自发有序Ｇａ０５Ｉｎ０５Ｐ合金的室温光致发光谱．三块样品的常压带隙能量分别比无序样品低１１５，９２和４３ｍｅＶ，它们的压力系数也从无序样品的９２ｍｅＶ／ＧＰａ分别减小到７５，８１和８３ｍｅＶ／ＧＰａ．用ΓＬ相互作用模型可以同时解释有序合金的带隙能量的降低以及压力系数的减小．得到的ΓＬ相互作用势分别为０１９，０１５和０１０ｅＶ．表明在自发有序Ｇａ０５Ｉｎ０５Ｐ合金中存在着的沿［１１１］方向的有序是带隙能量降低的主要原因．在样品Ｃ中还观察到了明显的ΓＸ反交叉行为．拟合得到的ΓＸ相互作用势为００１１ｅＶ，比ΓＬ相互作用势小一个数量级．表明在此样品中除［１１１］有序外还存在弱的［００１］有序 Room temperature photoluminescence spectra of spontaneous ordered Ga0.5In0.5P alloys were measured in the static pressure range of 0-7GPa. The atmospheric pressure bandgap energies of the three samples were 115, 92 and 43 meV lower than that of the unordered samples, respectively, and their pressure coefficients decreased from 92 meV / GPa to 75, 81 and 83 meV / GPa, respectively. The ΓL interaction model can be used to explain both the decrease of the bandgap energy and the decrease of the pressure coefficient of the ordered alloy. The ΓL interaction potentials obtained were 019,015 and 010eV, respectively. It is shown that the order along the [111] direction in the spontaneous ordered Ga0.5In0.5P alloy is the main reason for the decrease of band gap energy. In sample C also observed significant Γ χ anti-crossover behavior. The ΓX interaction potential obtained by fitting is 0011eV, which is an order of magnitude smaller than that of ΓL. It shows that there is weak [001] order in this sample besides [111] order