论文部分内容阅读
研究了极细沟道 NMOSFET器件的随机电报信号噪声 ( RTS)的特征 .首次在室温下观测到了大幅度 (大于 60 % )的 RTS,发现当器件工作在弱反型区时 ,RTS幅度基本与温度和栅压无关 .对 RTS的动力学机制的分析及数值模拟表明 ,载流子数涨落与迁移率涨落引起的 RTS的幅度随着沟道宽度的减小而增加 ,当沟道宽度减小至 40 nm以下时 ,由荷电陷阱对沟道载流子散射而产生的迁移率涨落对细沟道中 RTS幅度的影响起主导作用 .
The characteristics of stochastic telegraphic signal noise (RTS) for very fine channel NMOSFET devices were investigated.The RTS amplitude was observed for more than 60% at room temperature for the first time, and it was found that when the device operates in a weak inversion region, Temperature and gate voltage.Analysis and numerical simulation of the dynamic mechanism of RTS show that the amplitude of RTS caused by fluctuation of carrier number and mobility increases with the decrease of channel width, When it is reduced to below 40 nm, the fluctuation of the mobility due to the charge traps to channel carrier scattering plays a dominant role in the RTS amplitude in the fine channel.