铜基引线框架氧化时先后分别生成Cu2O和CuO,形成结构为CuO/Cu2O/Cu的氧化产物。通过称重法估算氧化膜的厚度,通过电桥法测量电阻值评估引线框架的氧化程度。在引线框架的氧化初期,氧化速率由化学反应速率控制;在氧化中期,氧化速率由化学反应速率和扩散速率共同控制;在氧化后期,氧化速率由扩散速率控制。其中扩散过程包括Cu离子的向外扩散和氧原子的向内扩散。为了控制铜基引线框架的氧化,一方面可以优化封装工艺参数,降低封装过程对框架的氧化;另一方面,可以提高铜合金冶金技术,提高铜合金材料本身的抗氧化能力。 Cu-based lead frame oxidation has been generated respectively Cu2O and CuO, the formation of the structure of CuO / Cu2O / Cu oxidation products. The thickness of the oxide film was estimated by the weighing method, and the resistance value of the lead frame was measured by a bridge method to evaluate the degree of oxidation of the lead frame. In the initial stage of oxidation of the lead frame, the oxidation rate is controlled by the chemical reaction rate. In the mid-oxidation period, the oxidation rate is controlled by both the chemical reaction rate and the diffusion rate. In the late oxidation stage, the oxidation rate is controlled by the diffusion rate. The diffusion process includes the outward diffusion of Cu ions and the inward diffusion of oxygen atoms. In order to control the oxidation of the copper-based lead frame, on the one hand, the process parameters can be optimized and the oxidation of the frame during the packaging process can be reduced; on the other hand, the copper alloy metallurgy technology can be improved and the oxidation resistance of the copper alloy material can be improved.