We report a systematical study on the molecular beam epitaxy growth and optical property of (GaAs1-xSbx/Iny Ga1-yAs)/GaAs bilayer quantum well (BQW) structures.
Er-doped silicon-rich SiO2 thin films were prepared by an rf co-sputtering method, followed by thermal annealing at 700-1200℃ for 30min. The microstructure is
We investigate the effect of CH-doped and F-doped on dielectric properties of SiCOH films deposited by decamethylcyclopentasiloxane (DMCPS) electron cyclotron r