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本工作根据极性半导体的载流子散射机构的基本模型,计算出杂质浓度和迁移率的关系,分析了模型的实验基础,认为在55°K下由载流子的迁移率确定补偿度的方法是有实用价值的。
In this work, the relationship between impurity concentration and mobility was calculated according to the basic model of carrier wave scattering mechanism of polar semiconductor. The experimental foundation of the model was analyzed. It was considered that the degree of compensation was determined by the carrier mobility at 55 ° K The method is of practical value.