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采用中频磁控反应溅射工艺进行氧化铝薄膜的沉积实验,对该工艺过程中溅射电压和沉积速率与氧流量的“迟滞回线”现象进行了研究。通过对实验现象的分析讨论,解释了薄膜沉积速率变化的原因。
The deposition experiment of alumina thin film was carried out by medium frequency magnetron reactive sputtering, and the phenomena of “hysteresis loop” of sputtering voltage, deposition rate and oxygen flow in the process were studied. Through the analysis and discussion of the experimental phenomena, the reason for the change of the film deposition rate is explained.