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The Si2Sb2Te5 phase change material has been studied by applying a nano-tip(30 nm in diameter) on an atomic force microscopy system.Memory switching from a high resistance state to a low resistance state has been achieved,with a resistance change of about 1000 times.In a typical I-V curve,the current increases significantly after the voltage exceeds～4.3 V.The phase transformation of a Si2Sb2Te5 film was studied in situ by means of in situ X-ray diffraction and temperature dependent resistance measurements.The thermal stability of Si2Sb2Te5 and Ge2Sb2Te5 was characterized and compared as well.
The Si2Sb2Te5 phase change material has been studied by applying a nano-tip (30 nm in diameter) on an atomic force microscopy system. Memory switching from a high resistance state to a low resistance state has been achieved with a resistance change of about 1000 times.In a typical IV curve, the current increase significantly after the voltage exceeds ~ 4.3 V. The phase transformation of a Si2Sb2Te5 film was studied in situ by means of in situ X-ray diffraction and temperature dependent resistance measurements. The thermal stability of Si2Sb2Te5 and Ge2Sb2Te5 was characterized and compared as well.