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在超高频晶体管的制造过程中,为了获得高的截止频率特性,浅的发射极-基极结深和窄的发射极宽度是必要的。为了这一目的,通常采用泡发射极结构。在这种情况下,如果发射极-基极结深小于1微米时,由于铝电极接触在400～500℃的温度下合金以及接触的可靠性变坏,所以在电极和发射极-基极结之间常常发生短路。本文叙述的是双注入晶体管,其发射极-基极结深在0.3微米以下,因此用普通的方法,发射极-基极就会发生短路。为了解决这一问题,采用了外延复盖层技术,它是在浅
In the manufacture of UHF transistors, shallow emitter-base junction depths and narrow emitter widths are necessary in order to achieve high cutoff frequency characteristics. Bubble emitter structures are often used for this purpose. In this case, if the emitter-base junction depth is less than 1 μm, the reliability of the alloy and the contact deteriorates due to the deterioration of the aluminum electrode contact at a temperature of 400 to 500 ° C., and therefore, the electrode and the emitter-base junction Short circuit often occurs. This article describes a dual-injection transistor with an emitter-base junction depth below 0.3 microns, so that in the usual way, the emitter-base short circuit occurs. In order to solve this problem, using the epitaxial cover technology, it is shallow