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在R-on-1的辐照模式下,利用355nm的紫外脉冲激光以低于KH2PO4(KDP)晶体零概率损伤阈值的通量对其进行不同发次的全域扫描,目的是为了研究KDP晶体在接受不同发次的紫外激光辐照后其抗损伤能力的变化规律及机制.辐照后的1-on-1损伤测试表明,适当的紫外激光退火可以有效地提升KDP晶体的抗损伤能力,提升的幅度与其接受激光扫描的次数有关.通过荧光和紫外吸收检测深入探讨了晶体内缺陷对激光退火的影响,结果表明:紫外脉冲激光辐照后KDP晶体内的氧空位电子缺陷的存在与否是导致其抗损伤能力变化的主要原因;通过拉曼和红外光谱的测量表明,辐照后KDP晶体内的PO4,P-OH和P=O基团的极化变形也导致了其抗损伤能力的改变.
In the R-on-1 irradiation mode, a global scanning of different incidences was performed with a 355 nm UV pulsed laser at a flux lower than the zero probability damage threshold of KH2PO4 (KDP) crystals in order to study the effect of KDP crystals on The variation regularity and mechanism of the damage resistance of the irradiated KDP crystal irradiated by ultraviolet laser were studied.The 1-on-1 damage test showed that proper UV laser annealing can effectively enhance the anti-damage ability of KDP crystal, Is related to the frequency of laser scanning.The effects of intracrystalline defects on laser annealing are discussed in depth by fluorescence and UV absorption measurements.The results show that the presence or absence of oxygen vacancy electron defects in KDP crystals after UV pulsed laser irradiation is Leading to its resistance to damage changes in the main reasons; by Raman and infrared spectroscopy measurements show that after irradiation, KDP crystal PO4, P-OH and P = O group polarization deformation also led to its resistance to damage change.