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提出了一套采用扩散工艺在低掺杂的硅衬底上选择性形成多孔硅牺牲层 ,并制作了 MEMS器件结构的工艺流程 ,进行了工艺流水 .对得到的结果进行了详细的讨论 .对于 KOH溶液释放多孔硅牺牲层技术进行了研究
A set of process flow of selectively forming a porous sacrificial silicon layer on a low-doped silicon substrate by a diffusion process and fabricating a MEMS device structure is presented, and the results are discussed in detail. KOH solution to release porous silicon sacrificial layer technology was studied