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由于光启动半导体开关能在千伏电平快速开关,因此,近年来,它们越来越受到人们的关注。根据这个实际装置设计的脉冲发生器在很高脉冲重复频率(大于100kHz)时能够产生极窄的脉宽(小于2ns)在今后高分辨率毫米波系统中,这种脉冲发生器将很有用途,可调制栅控管。如长区管和行波管。本文利用钕-钇铝石榴石和砷化镓激光器阐述了纯硅的开关特性。把半导体试样放到50Ω的传输线上,末端是50Ω负载。对于采样的各种光输入和偏压电平测量了增大的电导率(代表开关效率)、上升时间和恢复时间。脉冲偏压允许使用高压(达3kV)。用载流子传送模型说明了测量结果。总的说来,结果证明光启动半导体很适于高速调制器的应用。
Since light-activated semiconductor switches can rapidly switch at a kilovolt level, they have attracted more and more attention in recent years. Pulse generator designed according to this real device can produce extremely narrow pulse width (less than 2ns) at high pulse repetition frequency (more than 100kHz). In the future high resolution millimeter wave system, this pulse generator will be very useful Adjustable gate control. Such as the long zone tube and traveling wave tube. In this paper, neodymium-yttrium aluminum garnet and gallium arsenide lasers are used to illustrate the switching characteristics of pure silicon. Place the semiconductor sample on a 50Ω transmission line with a 50Ω load at the end. Increased conductivity (representing switching efficiency), rise time, and recovery time were measured for various optical inputs and bias levels of the samples. Pulse bias allows the use of high voltage (up to 3kV). The carrier transport model illustrates the measurement results. Overall, the results demonstrate that light-activated semiconductors are well suited for high-speed modulator applications.