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采用脉冲激光烧蚀高纯YSi2靶,在n型Si(100)单晶衬底上制备YSi2纳米颗粒。原子力显微镜(AFM)观察样品表面颗粒尺寸约40~50 nm。X射线光电子能谱(XPS)测试结果表明,YSi2纳米颗粒成分为Y-O-Si。室温下对样品的光致发光(PL)性能进行测试,在500 nm处有一个较大的宽峰,409 nm附近出现强度较弱的发光峰。前者与样品中Y-O-Si电荷迁移带有关,后者为衬底表面纳米尺寸SiOx复合中心离子发光。室温下,对原位制备的薄膜电学(I-V/C-V)性能进行测试,结果表明薄膜的介电常数约为13.6。
High-purity YSi2 targets were ablated by pulsed laser to prepare YSi2 nanoparticles on n-type Si (100) single crystal substrate. Atomic force microscopy (AFM) to observe the sample surface particle size of about 40 ~ 50 nm. X-ray photoelectron spectroscopy (XPS) test results show that, YSi2 nanoparticles Y-O-Si composition. The photoluminescence (PL) properties of the samples were tested at room temperature with a large peak at 500 nm and a less intense luminescence peak near 409 nm. The former is related to the Y-O-Si charge transport band in the sample and the latter is luminescence of the nanosized SiOx composite center ion on the substrate surface. The in-situ prepared thin film electrical (I-V / C-V) performance was tested and found to have a dielectric constant of about 13.6 at room temperature.